MFG:N/A Package Cooled:N/A D/C:09+
MFG: N/A
Package Cooled: N/A
D/C: 09+
Description: These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTren...
These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
-20 |
V |
|
VGSS |
Gate-Source Voltage |
±8 |
V |
|
ID |
Drain Current - Continuous (Note 1a)
- Pulsed |
2.3 |
A |
|
7 | |||
|
PD |
Power Dissipation for Single Operation (Note 1a)
(Note 1b) (Note 1c) |
0.96 |
W |
|
0.9 | |||
|
0.7 | |||
|
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
FDC6312P
PDF/DataSheet Download
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