FDC6322C

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Transistor Polarity : N and P-Channel
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 5 Ohms
Drain-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : + 0.22 A, - 0.46 A


Features:

N-Ch 25 V, 0.22 A,  R_DS(ON) =5 W @ V_GS= 2.7 V.
P-Ch 25 V, -0.46 A, R_DS(ON) =1.5 W @ V_GS= -2.7 V.
Very low level gate drive requirements allowing  direct operation in 3 V circuits. V_GS(th) < 1.5 V.
Gate-Source Zener for ESD ruggedness.>6kV Human Body Model
Replace  NPN & PNP digital transistors.


Specifications

Symbol	Parameter	N-Channel	P-Channel	Units
VDSS, VCC	Drain-Source Voltage, Power Supply Voltage	25	-25	V
VGSS, VIN	Gate-Source Voltage,	±8	±8	V
ID, IO	Drain Current - Continuous                           - Pulsed	0.22	-0.46	A
		0.5	-1
PD	Maximum Power Dissipation (Note 1a)                                                                    (Note1b)	0.9		W
		0.7
TJ, Tstg	Operating and Storage Tempature Ranger	-55 to +150		°C
ESD	Electrostatic Discharge Rating MIL-STD-883D       Human Body Model (100pf / 1500 Ohm)	6		kV

Description

These dual N & P Channel logic level enhancement mode field effec  transistors FDC6322C are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.

The  device FDC6322C is an improved   design especially for low voltage applications  as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.

Parameters:

Technical/Catalog Information	FDC6322C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	220mA, 460mA
Rds On (Max) @ Id, Vgs	4 Ohm @ 400mA, 4.5V
Input Capacitance (Ciss) @ Vds	9.5pF @ 10V
Power - Max	700mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	0.7nC @ 4.5V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC6322C FDC6322C