FDC6327C

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Transistor Polarity : N and P-Channel
Drain-Source Breakdown Voltage : +/- 20 V
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.069 Ohms
Continuous Drain Current : + 2.7 A, - 1.9 A


Features:

• N-Channel 2.7A, 20V.     R_DS(on)= 0.08Ω @ V_GS = 4.5V
                                         R_DS(on)= 0.12Ω @ V_GS = 2.5V
• P-Channel -1.6A, -20V.  R_DS(on)= 0.17Ω @ V_GS = -4.5V
                                         R_DS(on)= 0.25Ω @ V_GS = -2.5V
• Fast switching speed.
• Low gate charge.
• High performance trench technology for extremely low R_DS(ON).
• SuperSOT^TM-6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).


Application

• DC/DC converter
• Load switch
• Motor driving


Specifications

Symbol	Parameter	N-Channel	P-Channel	Units
VDSS	Drain-Source Voltage	20	-20	V
VGSS	Gate-Source Voltage	±8	±8	V
ID	Drain Current - Continuous     (Note 1a) - Pulsed	2.7	-1.9	A
		8	-8
PD	Power Dissipation                   (Note 1a)                                (Note 1b)                                (Note 1c)	0.96		W
		0.9
		0.7
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150		°C

Description

These FDC6327C N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices FDC6327C have been designed to offer exceptional  power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Parameters:

Technical/Catalog Information	FDC6327C
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2.7A, 1.9A
Rds On (Max) @ Id, Vgs	80 mOhm @ 2.7A, 4.5V
Input Capacitance (Ciss) @ Vds	325pF @ 10V
Power - Max	700mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	4.5nC @ 4.5V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC6327C FDC6327C FDC6327CDKR ND FDC6327CDKRND FDC6327CDKR