MOSFET 30V/-30V N/P
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | - 30 V | ||
Gate-Source Breakdown Voltage : | +/- 16 V, +/- 25 V | Continuous Drain Current : | + 2.5 A, - 2 A | ||
Resistance Drain-Source RDS (on) : | 0.095 Ohms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SSOT-6 | Packaging : | Reel |
Symbol |
Parameter |
Q1 |
Q2 |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
30 ±16 2.5 8 |
30 ±25 2.0 8 |
V V A | |
ID |
Drain Current Continuous Pulsed |
(Note 1a) | |||
PD |
Power Dissipation for Single Operation |
(Note 1a) (Note 1b) (Note 1c) |
0.96 0.9 0.7 |
W | |
TJ, TSTG |
Operating and Storage Junction Temperature Range |
55 to +150 |
°C |
These FDC6333C N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices FDC6333C have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Technical/Catalog Information | FDC6333C |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N and P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 2.5A, 2A |
Rds On (Max) @ Id, Vgs | 95 mOhm @ 2.5A, 10V |
Input Capacitance (Ciss) @ Vds | 282pF @ 15V |
Power - Max | 700mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 6.6nC @ 10V |
Package / Case | SuperSOT-6 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDC6333C FDC6333C FDC6333CCT ND FDC6333CCTND FDC6333CCT |