FDC6333C

MOSFET 30V/-30V N/P

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SeekIC No. : 00149220 Detail

FDC6333C: MOSFET 30V/-30V N/P

floor Price/Ceiling Price

US $ .15~.29 / Piece | Get Latest Price
Part Number:
FDC6333C
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.29
  • $.23
  • $.17
  • $.15
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 16 V, +/- 25 V Continuous Drain Current : + 2.5 A, - 2 A
Resistance Drain-Source RDS (on) : 0.095 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Transistor Polarity : N and P-Channel
Drain-Source Breakdown Voltage : - 30 V
Resistance Drain-Source RDS (on) : 0.095 Ohms
Package / Case : SSOT-6
Gate-Source Breakdown Voltage : +/- 16 V, +/- 25 V
Continuous Drain Current : + 2.5 A, - 2 A


Features:

` Q1 2.5 A, 30V. RDS(ON) = 95 mW @ VGS = 10 V RDS(ON) = 150 mW @ VGS = 4.5 V
` Q2 2.0 A, 30V. RDS(ON) = 150 mW @ VGS = 10 V RDS(ON) = 220 mW @ VGS = 4.5 V
` Low gate charge
` High performance trench technology for extremely low RDS(ON).
` SuperSOT 6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).



Application

· DC/DC converter
· Load switch
· LCD display inverter



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Q1
Q2
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±16
2.5
8
30
±25
2.0
8
V
V
A
ID
Drain Current Continuous
Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
0.96
0.9
0.7
W
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C



Description

These FDC6333C N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices FDC6333C have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.




Parameters:

Technical/Catalog InformationFDC6333C
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2.5A, 2A
Rds On (Max) @ Id, Vgs95 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds 282pF @ 15V
Power - Max700mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs6.6nC @ 10V
Package / CaseSuperSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC6333C
FDC6333C
FDC6333CCT ND
FDC6333CCTND
FDC6333CCT



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