Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Drain-Source Breakdown Voltage
: - 20 V
Maximum Operating Temperature
: + 150 C
Gate-Source Breakdown Voltage
: +/- 8 V
Resistance Drain-Source RDS (on)
: 0.08 Ohms
Configuration
: Single Quad Drain
Package / Case
: SSOT-6
Continuous Drain Current
: 3.5 A
Features: ·-3.5 A, -20 V. RDS(ON) = 0.080 W @ VGS = -4.5 V RDS(ON) = 0.110 W @ VGS = -2.5 V.
·SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
·High density cell design for extremely low RDS(ON).
·Exceptional on-resistance and maximum DC current capability.Pinout
Specifications
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS
VGSS |
Drain-Source Voltage
Gate-Source Voltage |
-20
±8
-3.5
-11
1.6
0.8
-55 to 150 |
V
V |
|
ID |
Drain Current - Continuous
- Pulsed |
(Note 1a) |
A |
|
PD |
Maximum Power Dissipation |
(Note 1a)
(Note 1b) |
W |
|
TJ, TSTG |
Operating and Storage Temperature Range |
°C |
THERMAL CHARACTERISTICS
RqJA
RqJC |
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case |
(Note 1a)
(Note 1) |
78
30 |
°C/W
°C/W |
DescriptionThese FDC634P P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices FDC634P are particularly suited for low voltage applications such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Parameters: | Technical/Catalog Information | FDC634P |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 3.5A |
| Rds On (Max) @ Id, Vgs | 80 mOhm @ 3.5A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 779pF @ 10V |
| Power - Max | 800mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 10nC @ 4.5V |
| Package / Case | SSOT-6 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDC634P
FDC634P
FDC634PCT ND
FDC634PCTND
FDC634PCT
|
FDC634P Data Sheet
