Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Drain-Source Breakdown Voltage
: - 20 V
Maximum Operating Temperature
: + 150 C
Gate-Source Breakdown Voltage
: +/- 8 V
Configuration
: Single Quad Drain
Resistance Drain-Source RDS (on)
: 0.13 Ohms
Package / Case
: SSOT-6
Continuous Drain Current
: 2.8 A
Features: ·-2.8 A, -20 V. RDS(ON) = 0.130 W @ VGS = -4.5 V RDS(ON) = 0.180 W @ VGS = -2.5 V.
·SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
·High density cell design for extremely low RDS(ON).
·Exceptional on-resistance and maximum DC current capability.Pinout
Specifications
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS
VGSS |
Drain-Source Voltage
Gate-Source Voltage |
-20
±8
-2.8
-11
1.6
0.8
-55 to 150 |
V
V
A
W
°C |
|
ID |
Drain Current Continuous
Pulsed |
(Note 1a) |
|
PD |
Power Dissipation for Single Operation |
(Note 1a)
(Note 1b) |
| TJ,TSTG |
Operating and Storage Junction Temperature Range |
THERMAL CHARACTERISTICS
RJA
RJC |
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case |
(Note 1a)
(Note 1) |
78
30 |
°C/W
°C/W |
DescriptionThese FDC636P P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices FDC636P are particularly suited for low voltage applications such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Parameters: | Technical/Catalog Information | FDC636P |
| Vendor | Fairchild Semiconductor |
| Category | Integrated Circuits (ICs) |
| Type | High Side Switch |
| Number of Outputs | 1 |
| Voltage - Input | - |
| Package / Case | SuperSOT-6 |
| Packaging | Tape & Reel (TR) |
| Current Limit | 2.8A |
| Internal Switch(s) | Yes |
| Operating Temperature | -55°C ~ 150°C |
| Rds (On) | 130 mOhm |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDC636P
FDC636P
FDC636PTR ND
FDC636PTRND
FDC636PTR
|
FDC636P Data Sheet
