FDC6392S

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.15 Ohms
Continuous Drain Current : - 2.2 A


Features:

MOSFET:
• 2.2 A, 20V. RDS(ON) = 150 mΩ @ VGS = 4.5V RDS(ON) = 200 mΩ @ VGS = 2.5V
• Low Gate Charge (3.7nC typ)
• Compact industry standard SuperSOT-6 package
Schottky:
• VF < 0.45 V @ 1 A


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		20 ±12 2.2 6 0.96 0.9 0.7 55 to +150 20 1	V V A W °C V A
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Maximum Power Dissipation	(Note 1a) (Note 1b)
TJ, TSTG	Operating and Storage Junction Temperature Range
VRRM	Schottky Repetitive Peak Reverse Voltage
IO	Schottky Average Forward Current	(Note 1a)

Description

The FDC6392S combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package.

This device FDC6392S is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

Parameters:

Technical/Catalog Information	FDC6392S
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2.2A
Rds On (Max) @ Id, Vgs	150 mOhm @ 2.2A, 4.5V
Input Capacitance (Ciss) @ Vds	369pF @ 10V
Power - Max	700mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	5.2nC @ 4.5V
Package / Case	SSOT-6
FET Feature	Diode (Isolated)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC6392S FDC6392S FDC6392SCT ND FDC6392SCTND FDC6392SCT