MOSFET Dual N-Ch 2.5V Spec Power Trench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 3 A | ||
Resistance Drain-Source RDS (on) : | 0.07 Ohms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SSOT-6 | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
20 |
V |
VGSS |
Gate-Source Voltage |
±12 |
V |
ID |
Drain Current - Continuous (Note 1a)
- Pulsed |
3.0 |
A |
12 | |||
PD |
Power Dissipation for Single Operation (Note 1a)
(Note 1b) (Note 1c) |
0.96 |
W |
0.9 | |||
0.7 | |||
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
This FDC6401N Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Technical/Catalog Information | FDC6401N |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 3A |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 3A, 4.5V |
Input Capacitance (Ciss) @ Vds | 324pF @ 10V |
Power - Max | 700mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 4.6nC @ 4.5V |
Package / Case | SSOT-6 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDC6401N FDC6401N FDC6401NTR ND FDC6401NTRND FDC6401NTR |