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FDC6401N

MOSFET Dual N-Ch 2.5V Spec Power Trench

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SeekIC No. : 00149993 Detail

FDC6401N: MOSFET Dual N-Ch 2.5V Spec Power Trench

FDC6401N Data Sheet

floor Price/Ceiling Price

US $ .16~.25 / Piece | Get Latest Price
Part Number:
FDC6401N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Processing time
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 0.07 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 3 A
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.07 Ohms


Features:

·  3.0 A, 20 V. R DS(ON)=  70 mW @ VGS = 4.5 V
                        R DS(ON)=  95 mW @ VGS = 2.5 V
·  Low gate charge (3.3 nC)
·  High performance trench technology for extremely low R DS(ON)
·  High power and current handling capability


Application

·  DC/DC converter
·  Battery Protection
·  Power Management


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID
 Drain Current - Continuous  (Note 1a)
                       - Pulsed
3.0
A
12
PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
                                                              (Note 1c)
0.96
W
0.9
0.7
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C



Description

This FDC6401N Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.  It has been optimized for low gate charge, low RDS(ON) and fast switching speed.




Parameters:

Technical/Catalog InformationFDC6401N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs70 mOhm @ 3A, 4.5V
Input Capacitance (Ciss) @ Vds 324pF @ 10V
Power - Max700mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs4.6nC @ 4.5V
Package / CaseSSOT-6
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC6401N
FDC6401N
FDC6401NTR ND
FDC6401NTRND
FDC6401NTR



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