FDC640P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 4.5 A
Configuration : Single Quad Drain
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.053 Ohms


Features:

• -4.5 A, -20 V. RDS(ON) = 0.050 Ω @ VGS = -4.5 V RDS(ON) = 0.077 Ω @ VGS = -2.5 V
• Rugged gate rating (±12V).
• High performance trench technology for extremely low RDS(ON).
• SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).


Application

• Load switch
• Battery protection
• Power management


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		-20 ±12 -4.5 -20 1.6 0.8 -55 to +150	V V
ID	Drain Current - Continuous Drain Current - Pulsed	(Note 1a)		A
PD	Power Dissipation for Single Operation	(Note 1a) (Note 1b)		W
TJ, TSTG	Operating and Storage Temperature Range			°C

THERMAL CHARACTERISTICS

RqJA RqJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

78 30

°C/W °C/W

Description

This FDC640P P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages.

Parameters:

Technical/Catalog Information	FDC640P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4.5A
Rds On (Max) @ Id, Vgs	53 mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) @ Vds	890pF @ 10V
Power - Max	800mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	13nC @ 4.5V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC640P FDC640P FDC640PDKR ND FDC640PDKRND FDC640PDKR