FDC6420C

MOSFET 20V/-20V N/P

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FDC6420C Picture
SeekIC No. : 00152164 Detail

FDC6420C: MOSFET 20V/-20V N/P

floor Price/Ceiling Price

US $ .21~.32 / Piece | Get Latest Price
Part Number:
FDC6420C
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.32
  • $.27
  • $.23
  • $.21
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : +/- 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : + 3 A, - 2.2 A
Resistance Drain-Source RDS (on) : 0.07 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Transistor Polarity : N and P-Channel
Gate-Source Breakdown Voltage : +/- 12 V
Drain-Source Breakdown Voltage : +/- 20 V
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.07 Ohms
Continuous Drain Current : + 3 A, - 2.2 A


Features:

` Q1 3.0 A, 20V. RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 95 mW @ VGS = 2.5 V
` Q2 2.2 A, 20V. RDS(ON) = 125 mW @ VGS = 4.5 V RDS(ON) = 190 mW @ VGS = 2.5 V
` Low gate charge
` High performance trench technology for extremely low RDS(ON).
` SuperSOT 6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).



Application

· DC/DC converter
· Load switch
· LCD display inverter



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Q1 Q2
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
20
±12
3.0
12
20
±12
2.2
6
V
V
A


W


°C
ID
Drain Current Continuous
Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG Operating and Storage Junction Temperature Range
0.96
0.9
0.7
55 to +150



Description

These FDC6420C N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices FDC6420C have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.




Parameters:

Technical/Catalog InformationFDC6420C
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3A, 2.2A
Rds On (Max) @ Id, Vgs70 mOhm @ 3A, 4.5V
Input Capacitance (Ciss) @ Vds 324pF @ 10V
Power - Max700mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs4.6nC @ 4.5V
Package / CaseSuperSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC6420C
FDC6420C
FDC6420CCT ND
FDC6420CCTND
FDC6420CCT



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