FDC6432SH-NL

The FDC6432SH-NL is one member of the FDC6432SH series.This complementary P-Channel MOSFET with SyncFET has been designed specifically to improve the overall efficiency of DC/DC  converters using either synchronous or conventional switching PWM controllers. It has been optimized for providing an extremely low RDS(ON) in a small package.

Features of the FDC6432SH-NL are:(1)syncFET 2.4 A,30 V. RDS(ON) = 90m @ VGS =10 V,RDS(ON) = 105m @ VGS =4.5 V; (2)P-channel -2.5 A,-12 V. RDS(ON) = 90m @ VGS =-4.5 V,RDS(ON) = 125m @ VGS =-2.5 V,RDS(ON) = 220m @ VGS =-1.8 V;(3)fast switching speed;(4)high performance trench technology for extremely low RDS(ON).This datasheet contains preliminary data, and supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

The absolute maximum ratings of the FDC6432SH-NL can be summarized as:(1)drain-source voltage:30 V;(2)storage temperature range:-55 to 150;(3)drain current:7A;(4)operating junction temperature:-55 to 150;(5)power dissipation:1.3W;(6)gate-source voltage:±16V.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.

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