FDC645N

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 5.5 A
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Single Quad Drain
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.03 Ohms


Features:

• 5.5 A, 30 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 26 mΩ @ VGS = 10 V
• High performance trench technology for extremely low RDS(ON)
• Low gate charge (13 nC typical)
• High power and current handling capability


Application

• DC/DC converter


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 ±12 5.5 20 1.6 0.8 -55 to +150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a) (Note 1a)
PD	Maximum Power Dissipation	(Note 1a) (Note 1b) (Note 1c)
TJ,TSTG	Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

78 30

°C/W °C/W

Description

This FDC645N N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. FDC645N has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Parameters:

Technical/Catalog Information	FDC645N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	5.5A
Rds On (Max) @ Id, Vgs	26 mOhm @ 6.2A, 10V
Input Capacitance (Ciss) @ Vds	1460pF @ 15V
Power - Max	800mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	21nC @ 4.5V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC645N FDC645N