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MFG:FSC Package Cooled:2002
Part Number: FDC6506P
MFG: FSC
Package Cooled: 2002
Description: These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench ...
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FDC6506P
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DataSheet
General Description
FDC6506P General Description
These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
FDC6506P Maximum Ratings
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
-30 |
V |
|
VGSS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current - Continuous (Note 1a)
- Pulsed |
-1.8 |
A |
|
-10 | |||
|
PD |
Power Dissipation for Single Operation (Note 1a)
(Note 1b) (Note 1c) |
0.96 |
W |
| 0.9
| |||
|
0.7 | |||
|
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
FDC6506P Features
• -1.8 A, -30 V. RDS(on)= 0.170 Ω @ VGS = -10 V
RDS(on)= 0.280 Ω @ VGS = -4.5V
• Low gate charge (2.3nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(on)
• SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
RDS(on)= 0.280 Ω @ VGS = -4.5V
• Low gate charge (2.3nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(on)
• SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
FDC6506P Typical Application
• Load switch
• Battery protection
• Power management
• Battery protection
• Power management
FDC6506P
PDF/DataSheet Download
- Datasheet: FDC6506P
- File Size: 208982 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
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