FDC6506P

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Drain-Source Breakdown Voltage : - 30 V
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.17 Ohms
Continuous Drain Current : 1.8 A


Features:

• -1.8 A, -30 V. R_DS(on)= 0.170 Ω @ VGS = -10 V
                         R_DS(on)= 0.280 Ω @ VGS = -4.5V
• Low gate charge (2.3nC typical).
• Fast switching speed.
•  High performance trench technology for extremely low R_DS(on)
• SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).


Application

•  Load switch
•  Battery protection
•  Power management


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-30	V
VGSS	Gate-Source Voltage	± 20	V
ID	Drain Current - Continuous  (Note 1a)                        - Pulsed	-1.8	A
		-10
PD	Power Dissipation for Single Operation (Note 1a)                                                               (Note 1b)                                                               (Note 1c)	0.96	W
		0.9
		0.7
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

These P-Channel logic level MOSFETs FDC6506P are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices FDC6506P have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Parameters:

Technical/Catalog Information	FDC6506P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	1.8A
Rds On (Max) @ Id, Vgs	170 mOhm @ 1.8A, 10V
Input Capacitance (Ciss) @ Vds	190pF @ 15V
Power - Max	700mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	3.5nC @ 10V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC6506P FDC6506P FDC6506PDKR ND FDC6506PDKRND FDC6506PDKR