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MFG:FAIRCHILD  D/C:00/01/03+  

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Part Number: FDC654P

 

MFG: FAIRCHILD

 

D/C: 00/01/03+

Description: These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchi...


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FDC654P General Description


These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

FDC654P Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-30
±20
-3.6
-10
1.6
0.8
-55 to 150
V
V
A

W

°C
ID
Drain Current Continuous
Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS
RJA
RJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W

FDC654P Features

·-3.6 A, -30 V. RDS(ON) = 0.075 W @ VGS = -10 V RDS(ON) = 0.125 W @ VGS = -4.5 V.
·SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
·High density cell design for extremely low RDS(ON).
·Exceptional on-resistance and maximum DC current capability.

FDC654P Connection Diagram

FDC654P  Connection Diagram

FDC654P datasheet

FDC654P
PDF/DataSheet Download

  • Datasheet: FDC654P
  • File Size: 76403 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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