Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Drain-Source Breakdown Voltage
: - 30 V
Continuous Drain Current
: 3.6 A
Configuration
: Single Quad Drain
Package / Case
: SSOT-6
Resistance Drain-Source RDS (on)
: 0.075 Ohms
Features: ·-3.6 A, -30 V. RDS(ON) = 0.075 W @ VGS = -10 V RDS(ON) = 0.125 W @ VGS = -4.5 V.
·SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
·High density cell design for extremely low RDS(ON).
·Exceptional on-resistance and maximum DC current capability.Pinout
Specifications
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS
VGSS |
Drain-Source Voltage
Gate-Source Voltage |
-30
±20
-3.6
-10
1.6
0.8
-55 to 150 |
V
V
A
W
°C |
|
ID |
Drain Current Continuous
Pulsed |
(Note 1a) |
|
PD |
Power Dissipation for Single Operation |
(Note 1a)
(Note 1b) |
| TJ,TSTG |
Operating and Storage Junction Temperature Range |
THERMAL CHARACTERISTICS
RJA
RJC |
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case |
(Note 1a)
(Note 1) |
78
30 |
°C/W
°C/W |
DescriptionThese FDC654P P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices FDC654P are particularly suited for low voltage applications such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Parameters: | Technical/Catalog Information | FDC654P |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 3.6A |
| Rds On (Max) @ Id, Vgs | 75 mOhm @ 3.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 298pF @ 15V |
| Power - Max | 800mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 9nC @ 10V |
| Package / Case | SuperSOT-6 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDC654P
FDC654P
FDC654PDKR ND
FDC654PDKRND
FDC654PDKR
|
FDC654P Data Sheet
