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MFG:FAIRCHILD D/C:00/01/03+


Part Number: FDC654P
MFG: FAIRCHILD
D/C: 00/01/03+
Description: These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchi...
MFG:FAIRCHILD D/C:00/01/03+


MFG: FAIRCHILD
D/C: 00/01/03+
Description: These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchi...
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
|
Symbol |
Parameter |
Ratings |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
-30 ±20 -3.6 -10 1.6 0.8 -55 to 150 |
V V A W °C | |
|
ID |
Drain Current Continuous Pulsed |
(Note 1a) | ||
|
PD |
Power Dissipation for Single Operation | (Note 1a) (Note 1b) | ||
| TJ,TSTG | Operating and Storage Junction Temperature Range | |||
| RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1a) (Note 1) |
78 30 |
°C/W °C/W |
FDC654P
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