FDC655AN

MOSFET SSOT-6 N-CH 30V

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SeekIC No. : 00159793 Detail

FDC655AN: MOSFET SSOT-6 N-CH 30V

floor Price/Ceiling Price

Part Number:
FDC655AN
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6.3 A
Resistance Drain-Source RDS (on) : 0.023 Ohms Configuration : Single Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-7 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 6.3 A
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 0.023 Ohms
Configuration : Single Quad Drain
Package / Case : SSOT-7


Features:

·6.3 A, 30 V. RDS(ON) = 0.027 W @ VGS = 10 V RDS(ON) = 0.035 W @ VGS = 4.5 V.
·Fast switching.
·Low gate charge ( typical 9 nC).
·SuperSOTTM-6 package: small footprint (72% smaller than SO-8); low profile (1mm thick); pin compatible with TSOP-6.





Pinout

  Connection Diagram




Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±20
6.3
20
1.6
0.8
-55 to 150
V
V
A

W

°C
ID
Drain Current Continuous
Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS
RJA
RJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W

<T




Description

This FDC655AN N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices FDC655AN are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.






Parameters:

Technical/Catalog InformationFDC655AN
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C6.3A
Rds On (Max) @ Id, Vgs27 mOhm @ 6.3A, 10V
Input Capacitance (Ciss) @ Vds 830pF @ 15V
Power - Max800mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs13nC @ 5V
Package / CaseSuperSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC655AN
FDC655AN



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