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MFG:FAIRCHILD
Part Number: FDC655BN
MFG: FAIRCHILD
Description: This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench pro...
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FDC655BN
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DataSheet
General Description
FDC655BN General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimized on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDC655BN Maximum Ratings
|
Symbol |
Parameter |
Ratings |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
30 ± 20 6.3 20 1.6 0.8 55 to +150 |
V V A W °C | |
|
ID |
Drain Current Continuous Pulsed |
(Note 1a) | ||
|
PD |
Power Dissipation for Single Operation | (Note 1a) (Note 1b) | ||
| TJ,TSTG | Operating and Storage Junction Temperature Range | |||
THERMAL CHARACTERISTICS
| RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1a) (Note 1) |
78 30 |
°C/W °C/W |
FDC655BN Features
6.3 A, 30 V.RDS(ON)= 25 mΩ@ VGS= 10 VRDS(ON)= 33 mΩ@ VGS= 4.5 V
Fast switching
Low gate charge
High performance trench technology for extremely low Rdson
Fast switching
Low gate charge
High performance trench technology for extremely low Rdson
FDC655BN Connection Diagram
FDC655BN
PDF/DataSheet Download
- Datasheet: FDC655BN
- File Size: 540854 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
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