FDC6561AN

MOSFET SSOT-6 N-CH 30V

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SeekIC No. : 00146588 Detail

FDC6561AN: MOSFET SSOT-6 N-CH 30V

floor Price/Ceiling Price

US $ .2~.31 / Piece | Get Latest Price
Part Number:
FDC6561AN
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

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  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.31
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  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2.5 A
Resistance Drain-Source RDS (on) : 0.095 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Resistance Drain-Source RDS (on) : 0.095 Ohms
Package / Case : SSOT-6
Continuous Drain Current : 2.5 A


Features:

2.5 A, 30 V.  R DS(ON)= 0.095 W  @ VGS = 10 V                     
                    R DS(ON)= 0.145 W  @ VGS = 4.5 V
Very fast switching.
Low gate charge (2.1nC typical).
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).



Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
 Drain Current - Continuous  (Note 1a)
                       - Pulsed
2.5
A
10
PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
                                                              (Note 1c)
0.96
W
0.9
0.7
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C



Description

These FDC6561AN N-Channel  Logic  Level  MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These FDC6561AN devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.




Parameters:

Technical/Catalog InformationFDC6561AN
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2.5A
Rds On (Max) @ Id, Vgs95 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds 220pF @ 15V
Power - Max700mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs3.2nC @ 5V
Package / CaseSuperSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC6561AN
FDC6561AN
FDC6561ANTR ND
FDC6561ANTRND
FDC6561ANTR



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