MOSFET SSOT-6 N-CH 30V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 2.5 A | ||
Resistance Drain-Source RDS (on) : | 0.095 Ohms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SSOT-6 | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
30 |
V |
VGSS |
Gate-Source Voltage |
±20 |
V |
ID |
Drain Current - Continuous (Note 1a)
- Pulsed |
2.5 |
A |
10 | |||
PD |
Power Dissipation for Single Operation (Note 1a)
(Note 1b) (Note 1c) |
0.96 |
W |
0.9 | |||
0.7 | |||
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
These FDC6561AN N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These FDC6561AN devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.
Technical/Catalog Information | FDC6561AN |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 2.5A |
Rds On (Max) @ Id, Vgs | 95 mOhm @ 2.5A, 10V |
Input Capacitance (Ciss) @ Vds | 220pF @ 15V |
Power - Max | 700mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 3.2nC @ 5V |
Package / Case | SuperSOT-6 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDC6561AN FDC6561AN FDC6561ANTR ND FDC6561ANTRND FDC6561ANTR |