FDD120AN15A0

MOSFET 150V 14a 0.120 Ohm

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SeekIC No. : 00150007 Detail

FDD120AN15A0: MOSFET 150V 14a 0.120 Ohm

floor Price/Ceiling Price

US $ .35~.51 / Piece | Get Latest Price
Part Number:
FDD120AN15A0
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
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  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.51
  • $.45
  • $.41
  • $.35
  • Processing time
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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.12 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 14 A
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.12 Ohms


Features:

• rDS(ON) = 101mΩ (Typ.), VGS = 10V, ID = 4A
• Qg(tot) = 11.2nC (Typ.), VGS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101





Application

• DC/DC Converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems





Specifications

Symbol
Parameter
Ratings
Units
VDSS Drain to Source Voltage
150
V
VGS Gate to Source Voltage
±20
V
ID Drain Current
Continuous (TC=25, VGS = 10V)
14
A
Continuous (TC =100, VGS =10V)
9.7
A
Continuous (Tamb = 25, VGS = 10V, RJA = 52/W)
2.8
A
Pulsed
Figure 4
A
EAS Single Pulse Avalanche Energy (Note 1)
122
mJ
PD Power dissipation
65
W
Derate above 25
0.43
W/
TJ, TSTG Operating and Storage Temperature
-55 to 175




Product Product status Eco Status Pricing* Package type Leads Packing method Package Drawing Package Marking Convention**
FDD120AN15A0 Full Production RoHS Compliant $0.95 TO-252(DPAK) 2 TAPE REEL TBD Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K Line 2: FDD120AN Line 3: 15A0
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDD120AN15A0 is available. Click here for more information .





Description

The FDD120AN15A0 is a N-channel PowerTrench MOSFET.It is designed for (1)DC/DC converters and off-line UPS; (2)distributed power architectures and VRMs; (3)primary switch for 24V and 48V systems; (4)high voltage synchronous rectifier; (5)direct injection / diesel injection systems; (6)42V automotive load control; (7)electronic valve train systems.

Features of the FDD120AN15A0 are:(1)rds(on) = 101m (Typ.), Vgs= 10V, Id = 4A ; (2)Qg (tot) = 11.2nC (Typ.), Vgs = 10V; (3)low miller charge; (4)low qrr body diode; (5)UIS capability (single pulse and repetitive pulse); (6)qualified to AEC Q101.Thermal resistances corresponding to other copper areas can be obtained from Figure 21 or by calculation using Equation 2 or 3. Equation 2 is used for copper area defined in inches square and equation 3 is for area in centimeters square. The area, in square inches or square centimeters is the top copper area including the gate and source pads.

The absolute maximum ratings of the FDD120AN15A0 can be summarized as:(1)gate to source voltage:±20V;(2)storage temperature range:-55 to 175;(3)operating temperature range:-55 to 175;(4)drain to source voltage:150V;(5)power dissipation:65 W;(7)single pulse avalanche energy (Note 1):122 mJ.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.






Parameters:

Technical/Catalog InformationFDD120AN15A0
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs120 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 770pF @ 25V
Power - Max65W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs14.5nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD120AN15A0
FDD120AN15A0



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