FDD20AN06A0

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : TO-252
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 45 A
Resistance Drain-Source RDS (on) : 0.02 Ohms


Features:

• r_DS(ON) = 17mΩ (Typ.), V_GS = 10V, I_D = 45A
• Qg(tot) = 15nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101


Application

• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems


Specifications

Symbol	Parameter	Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage	60 ±20 45 32 8 Figure 4 50 90 0.60 -55 to 175	V V A A A A mJ W W/°C °C
ID	Drain Current Continuous (TC = 25°C, VGS = 10V) Continuous (TC = 100°C, VGS = 10V) Continuous (Tamb = 25°C, VGS = 10V, RJA = 52°C/W) Pulsed
EAS	Single Pulse Avalanche Energy (Note 1)
PD	Power dissipation Derate above 25°C
TJ,TSTG	Operating and Storage Temperature

THERMAL CHARACTERISTICS

RJC RJA RJA

Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area

1.67 100 52

°C/W °C/W °C/W

Parameters:

Technical/Catalog Information	FDD20AN06A0
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	45A
Rds On (Max) @ Id, Vgs	20 mOhm @ 45A, 10V
Input Capacitance (Ciss) @ Vds	950pF @ 25V
Power - Max	90W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	19nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD20AN06A0 FDD20AN06A0