MOSFET 60V 36A 26 OHM N-CH
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 36 A | ||
Resistance Drain-Source RDS (on) : | 0.026 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252AA | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
60 ±20 36 25 7 Figure 4 35 75 0.5 -55 to 175 |
V V A A A A mJ W W/°C °C |
ID |
Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, RJA = 52oC/W) Pulsed | ||
EAS |
Single Pulse Avalanche Energy (Note 1) | ||
PD |
Power dissipation Derate above 25°C | ||
TJ,TSTG | Operating and Storage Temperature |
RJC RJA RJA |
Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area |
2.0 100 52 |
°C/W °C/W °C/W |
Technical/Catalog Information | FDD26AN06A0 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 36A |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 36A, 10V |
Input Capacitance (Ciss) @ Vds | 800pF @ 25V |
Power - Max | 75W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 17nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDD26AN06A0 FDD26AN06A0 |