FDD306P

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : - 12 V
Resistance Drain-Source RDS (on) : 0.028 Ohms
Package / Case : TO-252AA
Continuous Drain Current : 6.7 A


Features:

6.7 A, 12 V. RDS(ON)= 28 mΩ@ VGS= 4.5 VRDS(ON)= 41 mΩ@ VGS= 2.5 VRDS(ON)= 90 mΩ@ VGS= 1.8 V
Fast switching speed
High performance trench technology for extremelylow RDS(ON)
High power and current handling capability


Application

DC/DC converter


Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		12 ±8 6.7 54 52 3.8 1.6 55 to +175	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 3) (Note 1a)
PD	Power Dissipation for Single Operation	(Note 1) (Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

RJC RJA RJA

Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient

(Note 1) (Note 1a) (Note 1b)

2.9 40 96

°C/W °C/W °C/W

Description

This P-Channel 1.8V Specified MOSFET FDD306P uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management.


Parameters:

Technical/Catalog Information	FDD306P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25° C	6.7A
Rds On (Max) @ Id, Vgs	28 mOhm @ 6.7A, 4.5V
Input Capacitance (Ciss) @ Vds	1290pF @ 6V
Power - Max	1.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	21nC @ 4.5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD306P FDD306P