FDD3570

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 80 V
Package / Case : TO-252AA
Continuous Drain Current : 43 A
Resistance Drain-Source RDS (on) : 0.015 Ohms


Features:

10 A, 80 V. R_DS(ON) = 0.019  @ V_GS = 10 V
                      R_DS(ON) = 0.022 @ V_GS = 6 V.
Fast switching speed.
High performance trench technology for extremely
    low R_DS(ON) .
  High power and current handling capability.


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	80	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (Note 3)                        Pulsed       (Note 1a)	43	A
		10
PD	Power Dissipation @TC=25°C (Note 3)                              @TA=25°C (Note 1a)                              @TA=25°C (Note 1b)	110	W
		3.4
		1.3
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDD3570 N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

This MOSFET FDD3570 features faster switching and lower gate change than other MOSFETs with comparable R_DS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency.

Parameters:

Technical/Catalog Information	FDD3570
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	20 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	2800pF @ 40V
Power - Max	1.3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	76nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD3570 FDD3570