FDD3670

MOSFET 100V NCh PowerTrench

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FDD3670 Picture
SeekIC No. : 00156500 Detail

FDD3670: MOSFET 100V NCh PowerTrench

floor Price/Ceiling Price

US $ .41~.46 / Piece | Get Latest Price
Part Number:
FDD3670
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1730
  • 1730~2000
  • 2000~2500
  • 2500~5000
  • Unit Price
  • $.46
  • $.43
  • $.43
  • $.41
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 34 A
Resistance Drain-Source RDS (on) : 0.022 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 34 A
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.022 Ohms


Features:

 34 A, 100 V. RDS(ON) = 0.030  @ VGS = 10 V
                        RDS(ON) = 0.033 @ VGS = 6 V
  Low gate charge (57 nC typical)
Fast switching speed
  High performance trench technology for extremely
    low RDS(ON)
  High power and current handling capability.



Pinout

  Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 100 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current Continuous
Drain Current Pulsed
34 A
100
PD Power Dissipation @TC=25°C (Note 3)
                             @TA=25°C (Note 1a
                             @TA=25°C (Note 1b)
70 W
3.2
1.3
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 °C



Description

This FDD3670 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


These MOSFETs FDD3670 feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.


The result is a MOSFET FDD3670 that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.




Parameters:

Technical/Catalog InformationFDD3670
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C34A
Rds On (Max) @ Id, Vgs32 mOhm @ 7.3A, 10V
Input Capacitance (Ciss) @ Vds 2490pF @ 50V
Power - Max1.6W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs80nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD3670
FDD3670



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