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FDD3682

MOSFET N-Channel PwrTrench

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SeekIC No. : 00160310 Detail

FDD3682: MOSFET N-Channel PwrTrench

FDD3682 Data Sheet

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Part Number:
FDD3682
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 0.032 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 32 A
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.032 Ohms


Features:

• rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A
• Qg(tot) = 18.5nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101


Application

• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection System
• 42V Automotive Load Control
• Electronic Valve Train System


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
100
±20

32
23
5.5
Figure 4
55
95
0.63
-55 to 175
V
V

A
A
A
A
mJ
W
W/°C
°C
ID
 Drain Current
Continuous (TC = 25°C, VGS = 10V) (Note 1)
Continuous (TC = 200°C, VGS = 10V) (Note 1)
Continuous (Tamb = 25°C, VGS = 10V, with RJA = 52°C/W)
Pulsed
EAS
 Single Pulse Avalanche Energy (Note 2)
PD
 Power dissipation
Derate above 25°C
TJ,TSTG Operating and Storage Temperature

THERMAL CHARACTERISTICS
RJC
RJA
RJA		 Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
1.58
100
52
 °C/W
°C/W
°C/W



Parameters:

Technical/Catalog InformationFDD3682
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C32A
Rds On (Max) @ Id, Vgs36 mOhm @ 32A, 10V
Input Capacitance (Ciss) @ Vds 1250pF @ 25V
Power - Max95W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs28nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD3682
FDD3682
FDD3682CT ND
FDD3682CTND
FDD3682CT



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