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FDD8586

MOSFET 20V 35A 5.5 OHM NCH DPAK PO

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SeekIC No. : 00162379 Detail

FDD8586: MOSFET 20V 35A 5.5 OHM NCH DPAK PO

FDD8586 Data Sheet

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Part Number:
FDD8586
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/7

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 35 A
Resistance Drain-Source RDS (on) : 0.004 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 35 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 0.004 Ohms


Parameters:

Technical/Catalog InformationFDD8586
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C35A
Rds On (Max) @ Id, Vgs5.5 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds 2480pF @ 10V
Power - Max77W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs48nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD8586
FDD8586
FDD8586CT ND
FDD8586CTND
FDD8586CT



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