FDD8870

MOSFET 30V N-Channel PowerTrench

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SeekIC No. : 00146486 Detail

FDD8870: MOSFET 30V N-Channel PowerTrench

floor Price/Ceiling Price

US $ .53~.87 / Piece | Get Latest Price
Part Number:
FDD8870
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.87
  • $.68
  • $.61
  • $.53
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2020/4/2

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 160 A
Resistance Drain-Source RDS (on) : 0.0039 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 160 A
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.0039 Ohms


Features:

• rDS(ON) = 3.9mW, VGS = 10V, ID = 35A
• rDS(ON)  = 4.4mW, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low rDS(ON)
• Low gate charge
• High power and current handling capability



Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±20

160
150
21
Figure 4
690
160
1.07
-55 to 175
V
V

A
A
A
A
mJ
W
W/°C
°C
ID
Drain Current
Continuous (TC = 25°C, V GS = 10V) (Note 1)
Continuous (TC = 25°C, V GS = 4.5V) (Note 1)
Continuous (Tamb = 25°C, VGS = 10V, with RqJA = 52°C/W)
Pulsed
EAS
Single Pulse Avalanche Energy (Note 1)
PD
Power dissipation
Derate above 25°C
TJ,TSTG Operating and Storage Temperature

THERMAL CHARACTERISTICS
RJC
RJA
RJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
0.94
100
52
°C/W
°C/W
°C/W



Description

This FDD8870 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.




Parameters:

Technical/Catalog InformationFDD8870
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C160A
Rds On (Max) @ Id, Vgs3.9 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds 5160pF @ 15V
Power - Max160W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs118nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD8870
FDD8870



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