FDFM2N111

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 4 A
Configuration : Single Dual Source
Resistance Drain-Source RDS (on) : 100 mOhms at 4.5 V
Package / Case : MLP EP-6


Features:

4 A, 20 V      R_DS(ON)= 100m   @ VGS = 4.5 V 
 
                       R_DS(ON)= 150m  @ VGS = 2.5 V
GS  Low Profile - 0.8 mm maximun - in the new package  MicroFET 3x3 mm


Application

Standard Buck Converter


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current -Continuous (Note 1a)	4	A
	-Pulsed	10
VRRM	Schottky Repetitive Peak Reverse voltage	20	V
IO	Schottky Average Forward Current (Note 1a)	2	A
PD	Power dissipation (Steady State) (Note 1a)	1.7	W
	Power dissipation (Steady State) (Note 1b)	0.8
TJ , TSTG	Operating and Storage Junction Temperature Range	-55 to +150

Parameters:

Technical/Catalog Information	FDFM2N111
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	100 mOhm @ 4A, 4.5V
Input Capacitance (Ciss) @ Vds	273pF @ 10V
Power - Max	800mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	3.8nC @ 4.5V
Package / Case	6-MLP
FET Feature	Diode (Isolated)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDFM2N111 FDFM2N111