FDFM2N111

MOSFET DUAL Pwr MOSFET & SCHOTTKY DIODE

product image

FDFM2N111 Picture
SeekIC No. : 00147571 Detail

FDFM2N111: MOSFET DUAL Pwr MOSFET & SCHOTTKY DIODE

floor Price/Ceiling Price

US $ .32~.55 / Piece | Get Latest Price
Part Number:
FDFM2N111
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.55
  • $.42
  • $.37
  • $.32
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 100 mOhms at 4.5 V Configuration : Single Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : MLP EP-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 4 A
Configuration : Single Dual Source
Resistance Drain-Source RDS (on) : 100 mOhms at 4.5 V
Package / Case : MLP EP-6


Features:

4 A, 20 V      RDS(ON)= 100m   @ VGS = 4.5 V 
 
                       RDS(ON)= 150m  @ VGS = 2.5 V
GS  Low Profile - 0.8 mm maximun - in the new package  MicroFET 3x3 mm



Application

Standard Buck Converter


Pinout

  Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage ±12 V
ID Drain Current -Continuous (Note 1a) 4 A
-Pulsed 10
VRRM Schottky Repetitive Peak Reverse voltage 20 V
IO Schottky Average Forward Current (Note 1a) 2 A
PD Power dissipation (Steady State) (Note 1a) 1.7 W
Power dissipation (Steady State) (Note 1b) 0.8
TJ , TSTG
Operating and Storage Junction Temperature Range -55 to +150  



Parameters:

Technical/Catalog InformationFDFM2N111
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs100 mOhm @ 4A, 4.5V
Input Capacitance (Ciss) @ Vds 273pF @ 10V
Power - Max800mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs3.8nC @ 4.5V
Package / Case6-MLP
FET FeatureDiode (Isolated)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDFM2N111
FDFM2N111



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Optical Inspection Equipment
Batteries, Chargers, Holders
Line Protection, Backups
Transformers
Crystals and Oscillators
View more