FDFM2P110

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 3.5 A
Configuration : Single Dual Source
Resistance Drain-Source RDS (on) : 0.14 Ohms
Package / Case : MLP-6


Features:

3.5 A, 20 V RDS(ON)= 140 mΩ@ VGS= 4.5 VRDS(ON)= 200 mΩ@ VGS= 2.5 V
Low Profile 0.8mm maximum in the new package MicroFET 3x3 mm


Application

DC-DC Converter


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		20 ± 12 3.5 10 20 2 2.4 1.2 55 to +150	V V A V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
VRRM	Schottky Repetitive Peak Reverse Voltage
IO	Schottky Average Forward Current	(Note 1a)
PD	Power Dissipation (Steady State)	(Note 1a) (Note 1b)
TJ, TSTG	Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

RJA RJA

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient

(Note 1a) (Note 1b)

60 145

°C/W

Description

FDFM2P110 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance.

Parameters:

Technical/Catalog Information	FDFM2P110
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3.5A
Rds On (Max) @ Id, Vgs	140 mOhm @ 3.5A, 4.5V
Input Capacitance (Ciss) @ Vds	280pF @ 10V
Power - Max	800mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	4nC @ 4.5V
Package / Case	6-MLP
FET Feature	Diode (Isolated)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDFM2P110 FDFM2P110