FDFS6N303

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Package / Case : SOIC-8 Narrow
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 0.035 Ohms


Features:

·6 A, 30 V. R_DS(ON) = 0.035 W @ V_GS = 10 V. R_DS(ON) = 0.050 W @ V_GS = 4.5 V.
·V_F < 0.28 V @ 0.1 A V_F < 0.42 V @ 3 A V_F < 0.50 V @ 6 A.
·Schottky and MOSFET incorporated into single power surface mount SO-8 package.
·General purpose pinout for design flexibility.
·Ideal for DC/DC converter applications.


Pinout




Specifications

Symbol	Parameter		FDFS6N303	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 ±20 6 30 2 1.6 0.9 -55 to 150	V V A W °C
ID	Drain Current - Continuous - Pulsed	(Note 1a)
PD	Power Dissipation for Dual Operation Power Dissipation for Single Operation	(Note 1a) (Note 1c)
TJ,TSTG	Operating and Storage Junction Temperature Range

Schottky Diode Maximum Ratings T_A = 25°C unless otherwise noted

VRRM IO

Repetitive Peak Reverse Voltage Average Forward Current

(Note 1a)

30 2

V A

Description

Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop (0.35V) Schottky diode into a single surface mount power package. The FDFS6N303 MOSFET and Schottky diode are isolated inside the package. The general purpose pinout has been chosen to maximize flexibility and ease of use. FETKEY products are particularly suited for switching applications such as DC/DC buck, boost, synchronous, and non-synchronous converters where the MOSFET is driven as low as 4.5V and fast switching, high efficiency and small PCB footprint is desirable.

Parameters:

Technical/Catalog Information	FDFS6N303
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	35 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds	350pF @ 15V
Power - Max	900mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	17nC @ 10V
Package / Case	8-SOIC
FET Feature	Diode (Isolated)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDFS6N303 FDFS6N303 FDFS6N303DKR ND FDFS6N303DKRND FDFS6N303DKR