FDG326P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 1.5 A
Package / Case : SC-70-6
Configuration : Single Quad Drain
Resistance Drain-Source RDS (on) : 0.14 Ohms


Features:

• 1.5 A, 20 V. R_DS(ON) = 140 mΩ @ V_GS = 4.5 V R_DS(ON) = 180 mΩ @ V_GS = 2.5 V R_DS(ON) = 250 mΩ @ V_GS = 1.8 V
• Low gate charge
• High performance trench technology for extremely low R_DS(ON)
• Compact industry standard SC70-6 surface mount package




Application

• Battery management
• Load switch




Pinout






Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		20 ± 8 1.5 6 0.75 0.48 -55 to +150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Maximum Power Dissipation	(Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

Description

The FDG326P is a P-channel 1.8V specified PowerTrench MOSFET.This P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process.It has been optimized for battery power management applications.This datasheet contains preliminary data, and supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Features of the FDG326P are:(1)low gate charge; (2)high performance trench technology for extremely low RDS(ON); (3)compact industry standard SC70-6 surface mount package.Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

The absolute maximum ratings of the FDG326P can be summarized as:(1)gate-source voltage:±8V;(2)storage junction temperature range:-55 to 150;(3)operating junction temperature range:-55 to 150;(4)drain-source voltage:-20V;(5)power dissipation:0.75 W.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).

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Parameters:

Technical/Catalog Information	FDG326P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.5A
Rds On (Max) @ Id, Vgs	140 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds	467pF @ 10V
Power - Max	480mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	7nC @ 4.5V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDG326P FDG326P