FDG312P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SC-70-6
Configuration : Single Quad Drain
Continuous Drain Current : 1.2 A
Resistance Drain-Source RDS (on) : 0.135 Ohms


Features:

• -1.2 A, -20 V. R_DS(on) = 0.18 @ V_GS = -4.5 V R_DS(on) = 0.25 @ V_GS = -2.5 V.
• Low gate charge (3.3 nC typical).
• High performance trench technology for extremely low RDS(ON).
• Compact industry standard SC70-6 surface mount package.


Application

• Load switch
• Battery protection
• Power management


Pinout

 


Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		-20 ± 8 -1.2 -6 0.75 0.55 0.48 -55 to +150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1)
PD	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)
TJ,TSTG	Operating and Storage Junction Temperature Range

Description

This FDG312P P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

Parameters:

Technical/Catalog Information	FDG312P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.2A
Rds On (Max) @ Id, Vgs	180 mOhm @ 1.2A, 4.5V
Input Capacitance (Ciss) @ Vds	330pF @ 10V
Power - Max	480mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	5nC @ 4.5V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDG312P FDG312P