MFG:FAI Package Cooled:0701+PB D/C:SOT26
MFG: FAI
Package Cooled: 0701+PB
D/C: SOT26
Description: This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, hig...
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.
|
Symbol |
Parameter |
NDS9936 |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
25 ± 8 0.95 2 0.75 0.55 0.48 -55 to +150 6 |
V V A W °C kV | |
|
ID |
Drain Current Continuous Pulsed |
(Note 1a) | ||
|
PD |
Power Dissipation for Single Operation | (Note 1a) (Note 1b) (Note 1c) | ||
| TJ,TSTG ESD |
Operating and Storage Junction Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf/1500Ohm) | |||
FDG313N
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This FDG312P P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices ar...
This FDG311N N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices ar...
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