FDG313N

MOSFET SC70-6 N-CH 25V

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SeekIC No. : 00147624 Detail

FDG313N: MOSFET SC70-6 N-CH 25V

floor Price/Ceiling Price

US $ .12~.2 / Piece | Get Latest Price
Part Number:
FDG313N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

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  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.2
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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 0.95 A
Resistance Drain-Source RDS (on) : 0.35 Ohms Configuration : Single Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SC-70-6
Configuration : Single Quad Drain
Resistance Drain-Source RDS (on) : 0.35 Ohms
Continuous Drain Current : 0.95 A


Features:

• 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V.
• Low gate charge (1.64 nC typical)
• Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V).
• Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
• Compact industry standard SC70-6 surface mount package.



Application

• Load switch
• Battery protection
• Power management



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
NDS9936
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
25
± 8
0.95
2
0.75
0.55
0.48
-55 to +150
6
V
V
A

W


°C
kV
ID
Drain Current Continuous
Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG
ESD
Operating and Storage Junction Temperature Range
Electrostatic Discharge Rating MIL-STD-883D Human Body
Model (100pf/1500Ohm)



Description

This FDG313N N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.




Parameters:

Technical/Catalog InformationFDG313N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C950mA
Rds On (Max) @ Id, Vgs450 mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) @ Vds 50pF @ 10V
Power - Max480mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs2.3nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG313N
FDG313N



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