FDG329N

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 1.5 A
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SC-70-6
Configuration : Single Quad Drain
Resistance Drain-Source RDS (on) : 70 m Ohms


Features:

· 1.5 A, 20 V. RDS(ON) = 90 mW @ VGS = 4.5 V. RDS(ON) = 115 mW @ VGS = 2.5 V
· Fast switching speed
· Low gate charge (3.3 nC typical)
· High performance trench technology for extremely low RDS(ON)
· High power and current handling capability.


Application

· DC/DC converter
· Power management
· Load switch


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		20 ± 12 1.5 6 0.42 0.38 -55 to +150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Power Dissipation for Single Operation	(Note 1a) (Note 1b)
TJ, TSTG	Operating and Storage Junction Temperature Range

Description

This FDG329N N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.

Parameters:

Technical/Catalog Information	FDG329N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.5A
Rds On (Max) @ Id, Vgs	90 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds	324pF @ 10V
Power - Max	380mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	4.6nC @ 4.5V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDG329N FDG329N