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FDG6306P

MOSFET P-Ch PowerTrench Specified 2.5V

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SeekIC No. : 00147532 Detail

FDG6306P: MOSFET P-Ch PowerTrench Specified 2.5V

FDG6306P Data Sheet

floor Price/Ceiling Price

US $ .16~.35 / Piece | Get Latest Price
Part Number:
FDG6306P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 25~100
  • 100~250
  • Unit Price
  • $.35
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  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 0.6 A
Resistance Drain-Source RDS (on) : 0.42 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 0.42 Ohms
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SC-70-6
Continuous Drain Current : 0.6 A


Features:

`  0.6 A, 20 V. RDS(ON) = 420 mW @ VGS = 4.5 VRDS(ON) = 630 mW @ VGS = 2.5 V
`  Low gate charge
`  High performance trench technology for extremely low RDS(ON)
`  Compact industry standard SC70-6 surface mount package


Application

·  Battery management
·  Load switch


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
20
± 12
0.6
2.0
0.3
-55 to +150
V
V
A

W
°C
ID
 Drain Current Continuous
Pulsed		 (Note 1)
PD
 Power Dissipation for Single Operation (Note 1)
TJ,TSTG Operating and Storage Junction Temperature Range



Description

This FDG6306P P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).




Parameters:

Technical/Catalog InformationFDG6306P
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C600mA
Rds On (Max) @ Id, Vgs*
Input Capacitance (Ciss) @ Vds 114pF @ 10V
Power - Max300mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs2nC @ 4.5V
Package / CaseSC-70-6, SOT-323-6
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG6306P
FDG6306P
FDG6306PCT ND
FDG6306PCTND
FDG6306PCT



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