MOSFET P-Ch PowerTrench Specified 2.5V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 0.6 A | ||
Resistance Drain-Source RDS (on) : | 0.42 Ohms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SC-70-6 | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
20 ± 12 0.6 2.0 0.3 -55 to +150 |
V V A W °C | |
ID |
Drain Current Continuous Pulsed |
(Note 1) | ||
PD |
Power Dissipation for Single Operation | (Note 1) | ||
TJ,TSTG | Operating and Storage Junction Temperature Range |
This FDG6306P P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
Technical/Catalog Information | FDG6306P |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 P-Channel (Dual) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 600mA |
Rds On (Max) @ Id, Vgs | * |
Input Capacitance (Ciss) @ Vds | 114pF @ 10V |
Power - Max | 300mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 2nC @ 4.5V |
Package / Case | SC-70-6, SOT-323-6 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDG6306P FDG6306P FDG6306PCT ND FDG6306PCTND FDG6306PCT |