Position: Home  > All Categories> Integrated Circuits (ICs) > FDG6308P

FDG6308P

MOSFET Dual P-Ch 1.8V Spec Power Trench

product image

FDG6308P Picture
See larger image
SeekIC No. : 00148256 Detail

FDG6308P: MOSFET Dual P-Ch 1.8V Spec Power Trench

FDG6308P Data Sheet

floor Price/Ceiling Price

US $ .22~.41 / Piece | Get Latest Price
Part Number:
FDG6308P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.41
  • $.29
  • $.25
  • $.22
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/22

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 0.6 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SC-70-6
Resistance Drain-Source RDS (on) : 0.4 Ohms
Continuous Drain Current : 0.6 A


Features:

• 0.6 A, 20 V. RDS(ON) = 0.40 Ω @ VGS = 4.5 V RDS(ON) = 0.55 Ω @ VGS = 2.5 V RDS(ON) = 0.80 Ω @ VGS = 1.8 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC70-6 surface mount package


Application

• Battery management
• Load switch


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
20
± 8
0.6
1.8
0.3
55 to +150
V
V
A

W
°C
ID
 Drain Current Continuous
Pulsed		 (Note 1)
PD
 Maximum Power Dissipation (Note 1)
TJ,TSTG Operating and Storage Junction Temperature Range



Description

This FDG6308P P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications.




Parameters:

Technical/Catalog InformationFDG6308P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C600mA
Rds On (Max) @ Id, Vgs400 mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) @ Vds 153pF @ 10V
Power - Max300mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs2.5nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG6308P
FDG6308P



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Tools
TCP202
G084SN05 V.3
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Undefined Category
VI-B63-IU
X27 589
LED Products
LM24P20
KCG057QV1DB-G770
Integrated Circuits (ICs)
TA8435H
1MB12-140
View more