MOSFET Dual P-Ch 1.8V Spec Power Trench
FDG6308P_Q: MOSFET Dual P-Ch 1.8V Spec Power Trench
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
| Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | - 0.6 A | ||
| Resistance Drain-Source RDS (on) : | 0.4 Ohms | Configuration : | Dual | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SC-70-6 | Packaging : | Reel |