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MFG:FAIRCHILD  Package Cooled:SC70-6  D/C:05+  

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Part Number: FDG6316P

 

MFG: FAIRCHILD

Package Cooled: SC70-6

D/C: 05+

Description: This P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has...


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FDG6316P General Description


This P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

FDG6316P Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
12
± 8
0.7
1.8
0.3
55 to +150
V
V
A

W
°C
ID
 Drain Current Continuous
Pulsed		 (Note 1)
PD
 Maximum Power Dissipation (Note 1)
TJ,TSTG Operating and Storage Junction Temperature Range

FDG6316P Features

• 0.7 A, 12 V. RDS(ON) = 270 mΩ @ VGS = 4.5 V RDS(ON) = 360 mΩ @ VGS = 2.5 V RDS(ON) = 650 mΩ @ VGS = 1.8 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC70-6 surface mount package

FDG6316P Typical Application

• Battery management
• Load switch

FDG6316P Connection Diagram

FDG6316P Connection Diagram

FDG6316P datasheet

FDG6316P
PDF/DataSheet Download

  • Datasheet: FDG6316P
  • File Size: 153175 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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