FDG6332C

MOSFET 20V N&P-Channel Power Trench

product image

FDG6332C Picture
SeekIC No. : 00149947 Detail

FDG6332C: MOSFET 20V N&P-Channel Power Trench

floor Price/Ceiling Price

US $ .16~.32 / Piece | Get Latest Price
Part Number:
FDG6332C
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.32
  • $.26
  • $.18
  • $.16
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : +/- 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 0.7 A
Resistance Drain-Source RDS (on) : 0.3 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Transistor Polarity : N and P-Channel
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SC-70-6
Drain-Source Breakdown Voltage : +/- 20 V
Resistance Drain-Source RDS (on) : 0.3 Ohms
Continuous Drain Current : 0.7 A


Features:

` Q1 0.7 A, 20V. RDS(ON) = 300 mW @ VGS = 4.5 V RDS(ON) = 400 mW @ VGS = 2.5 V
` Q2 0.6 A, 20V. RDS(ON) = 420 mW @ VGS = 4.5 V RDS(ON) = 630 mW @ VGS = 2.5 V
` Low gate charge
` High performance trench technology for extremely low RDS(ON)
` SC70-6 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick)



Application

· DC/DC converter
· Load switch
· LCD display inverter



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Q1
Q2
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
20
±12
0.7
2.1
20
±12
0.6
2
V
V
A

W

°C
ID
Drain Current Continuous Pulsed (Note 1)

PD

Power Dissipation for Single Operation (Note 1)
0.3
55 to +150
TJ,TSTG Operating and Storage Junction Temperature Range



Description

The FDG6332C N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These FDG6332C devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.




Parameters:

Technical/Catalog InformationFDG6332C
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C600mA
Rds On (Max) @ Id, Vgs300 mOhm @ 700A, 4.5V
Input Capacitance (Ciss) @ Vds 113pF @ 10V
Power - Max300mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs1.5nC @ 4.5V
Package / CaseSC-70-6
FET Feature*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG6332C
FDG6332C
FDG6332CDKR ND
FDG6332CDKRND
FDG6332CDKR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Transformers
Potentiometers, Variable Resistors
Crystals and Oscillators
Optoelectronics
Circuit Protection
Programmers, Development Systems
View more