MOSFET 20V N&P-Channel Power Trench
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | +/- 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 0.7 A | ||
Resistance Drain-Source RDS (on) : | 0.3 Ohms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SC-70-6 | Packaging : | Reel |
Symbol |
Parameter |
Q1 |
Q2 |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
20 ±12 0.7 2.1 |
20 ±12 0.6 2 |
V V A W °C | |
ID |
Drain Current Continuous Pulsed | (Note 1) | |||
PD |
Power Dissipation for Single Operation | (Note 1) |
0.3 55 to +150 | ||
TJ,TSTG | Operating and Storage Junction Temperature Range |
The FDG6332C N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These FDG6332C devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.
Technical/Catalog Information | FDG6332C |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N and P-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 600mA |
Rds On (Max) @ Id, Vgs | 300 mOhm @ 700A, 4.5V |
Input Capacitance (Ciss) @ Vds | 113pF @ 10V |
Power - Max | 300mW |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 1.5nC @ 4.5V |
Package / Case | SC-70-6 |
FET Feature | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDG6332C FDG6332C FDG6332CDKR ND FDG6332CDKRND FDG6332CDKR |