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FDG6335N

MOSFET FDG6335N

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SeekIC No. : 00147833 Detail

FDG6335N: MOSFET FDG6335N

FDG6335N Data Sheet

floor Price/Ceiling Price

US $ .17~.29 / Piece | Get Latest Price
Part Number:
FDG6335N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.29
  • $.25
  • $.21
  • $.17
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 0.7 A
Resistance Drain-Source RDS (on) : 0.3 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SC-70-6
Resistance Drain-Source RDS (on) : 0.3 Ohms
Continuous Drain Current : 0.7 A


Features:

· 0.7 A, 20 V. RDS(ON) = 300 mW @ VGS = 4.5 V RDS(ON) = 400 mW @ VGS = 2.5 V
· Low gate charge (1.1 nC typical)
· High performance trench technology for extremely low RDS(ON)
· Compact industry standard SC70-6 surface mount package


Application

· DC/DC converter
· Power management
· Loadswitch


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
20
± 12
0.7
2.1
0.3
55 to +150
V
V
A

W
°C
ID
 Drain Current Continuous
Pulsed		 (Note 1)
PD
 Power Dissipation for Single Operation (Note 1)
TJ,TSTG Operating and Storage Junction Temperature Range



Description

This FDG6335N N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.




Parameters:

Technical/Catalog InformationFDG6335N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C700mA
Rds On (Max) @ Id, Vgs300 mOhm @ 700mA, 4.5V
Input Capacitance (Ciss) @ Vds 113pF @ 10V
Power - Max300mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs1.4nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG6335N
FDG6335N



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