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FDH27N50

MOSFET 500V 27a 0.19Ohms/VGS=10

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SeekIC No. : 00163176 Detail

FDH27N50: MOSFET 500V 27a 0.19Ohms/VGS=10

FDH27N50 Data Sheet

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Part Number:
FDH27N50
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/8

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 27 A
Resistance Drain-Source RDS (on) : 0.19 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.19 Ohms
Package / Case : TO-247
Continuous Drain Current : 27 A


Features:

• Low Gate Charge Qg results in Simple Drive Requirement
• Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness
• Reduced rDS(ON)
• Reduced Miller Capacitance and Low Input Capacitance
• Improved Switching Speed with Low EMI
• 175°C Rated Junction Temperature


Application

• PFC Boost
• Two-Switch Forward Converter
• Single Switch Forward Converter
• Flyback Converter
• Buck Converter
• High Speed Switching


Specifications

Symbol
Parameter
 Ratings
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
500
±30

27
19
108
450
3
-55 to 175
300 (1.6mm from case)
10ibf*in (1.1N*m)
V
V

A
A
A
W
W/


ID
 Drain Current
Continuous (TC = 25, VGS = 10V)
Continuous (TC = 100, VGS = 10V)
Pulsed1
PD
 Power dissipation
Derate above 25
TJ, TSTG
 Operating and Storage Temperature
Soldering Temperature for 10 seconds
Mounting Torque, 8-32 or M3 Screw



Parameters:

Technical/Catalog InformationFDH27N50
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C27A
Rds On (Max) @ Id, Vgs190 mOhm @ 13.5A, 10V
Input Capacitance (Ciss) @ Vds 3550pF @ 25V
Power - Max450W
PackagingTube
Gate Charge (Qg) @ Vgs67nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDH27N50
FDH27N50



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