FDH50N50

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.105 Ohms
Continuous Drain Current : 48 A


Features:

* 48A, 500V, R_DS(on)  = 0.105 @V_GS  = 10 V
* Low gate charge ( typical 105 nC)
* Low C_rss ( typical  45 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability


Specifications

Symbol	Parameter	FDH50N50/FDA50N50	Unit
VDSS	Drain-Source Voltage	500	V
ID	Drain Current    - Continuous (TC = 25)                           - Continuous (TC = 100)	48 30.8	A A
IDM	Drain Current    - Pulsed                  (Note 1)	192	A
VGSS	Gate-Source voltage	±20	V
EAS	Single Pulsed Avalanche Energy     (Note 2)	1868	mJ
IAR	Avalanche Current                          (Note 1)	48	A
EAR	Repetitive Avalanche Energy          (Note 1)	62.5	mJ
dv/dt	Peak Diode Recovery dv/dt            (Note 3)	4.5	V/ns
PD	Power Dissipation (TC = 25)                                - Derate above 25	625 5	W W/°C
TJ,  TSTG	Operating and Storage Temperature Range	-55 to +150
TL	Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds	300

Description

  These FDH50N50 N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's proprietary, planar stripe,DMOS technology.

  This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices FDH50N50 are well suited for high effi-cient switched mode power supplies and active power factor correction.

Parameters:

Technical/Catalog Information	FDH50N50
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	48A
Rds On (Max) @ Id, Vgs	105 mOhm @ 24A, 10V
Input Capacitance (Ciss) @ Vds	6460pF @ 25V
Power - Max	625W
Packaging	Tube
Gate Charge (Qg) @ Vgs	137nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDH50N50 FDH50N50