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FDH5500

MOSFET 55V N-Channel UltraFET Power

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FDH5500: MOSFET 55V N-Channel UltraFET Power

FDH5500 Data Sheet

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Part Number:
FDH5500
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.007 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.007 Ohms
Package / Case : TO-247AB


Parameters:

Technical/Catalog InformationFDH5500
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs7 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 3565pF @ 25V
Power - Max375W
PackagingTube
Gate Charge (Qg) @ Vgs268nC @ 20V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDH5500
FDH5500



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