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FDI2532

MOSFET 150V N-Ch UltraFET Trench

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SeekIC No. : 00159623 Detail

FDI2532: MOSFET 150V N-Ch UltraFET Trench

FDI2532 Data Sheet

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Part Number:
FDI2532
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 79 A
Resistance Drain-Source RDS (on) : 0.016 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 150 V
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 0.016 Ohms
Continuous Drain Current : 79 A


Features:

*rDS(ON)  = 14m (Typ.), VGS = 10V, ID  = 33A
*Qg (tot) = 82nC (Typ.), VGS = 10V
*Low Miller Charge
*Low QRR  Body Diode
*UIS Capability (Single Pulse and Repetitive Pulse)
*Qualified to AEC Q101
Formerly developmental type 82884


Application

* DC/DC converters and Off-Line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 24V and 48V Systems
* High Voltage Synchronous Rectifier
* Direct Injection / Diesel Injection Systems
* 42V Automotive Load Control
* Electronic Valve Train Systems


Specifications

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 150
 V
VGS
Gate to Source Voltage		 ±20
 V
ID
 Drain Current
Continuous (TC= 25, VGS = 10V) 		 79 A
Continuous (TC = 100, VGS = 10V)  56 A
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W)  8 A
Pulsed Figure 4 A
EAS
 Single Pulse Avalanche Energy (Note 1) 400 mJ
PD
 Power dissipation 310 W
Derate above 25 2.07 W/
TJ, TSTG
 Operating and Storage Temperature -55 to 175



Parameters:

Technical/Catalog InformationFDI2532
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C79A
Rds On (Max) @ Id, Vgs16 mOhm @ 33A, 10V
Input Capacitance (Ciss) @ Vds 5870pF @ 25V
Power - Max310W
PackagingTube
Gate Charge (Qg) @ Vgs107nC @ 10V
Package / CaseTO-262AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDI2532
FDI2532



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