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FDI33N25TU

MOSFET TBD

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SeekIC No. : 00164002 Detail

FDI33N25TU: MOSFET TBD

FDI33N25TU Data Sheet

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Part Number:
FDI33N25TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 33 A
Resistance Drain-Source RDS (on) : 0.077 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-262AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Continuous Drain Current : 33 A
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.077 Ohms
Package / Case : TO-262AB


Parameters:

Technical/Catalog InformationFDI33N25TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C33A
Rds On (Max) @ Id, Vgs94 mOhm @ 16.5A, 10V
Input Capacitance (Ciss) @ Vds 2135pF @ 25V
Power - Max235W
PackagingTube
Gate Charge (Qg) @ Vgs48nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDI33N25TU
FDI33N25TU



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