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FDI3652

MOSFET 100V 61a 0.016 Ohm

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SeekIC No. : 00163662 Detail

FDI3652: MOSFET 100V 61a 0.016 Ohm

FDI3652 Data Sheet

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Part Number:
FDI3652
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 61 A
Resistance Drain-Source RDS (on) : 7.5 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 61 A
Resistance Drain-Source RDS (on) : 7.5 m Ohms
Package / Case : TO-262AA


Features:

• r DS(ON)= 14mΩ (Typ.), VGS= 10V, ID = 61A
• Qg(tot) = 41nC (Typ.), VGS=10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101


Application

• DC/DC Converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
Continuous (TC = 25, VGS = 10V)
        61
A
Continuous (TC = 100, VGS = 10V)
43
A
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W)
9
A
Pulsed
Figure 4
A
EAS
Single Pulse Avalanche Energy (Note 1)
182
mJ
PD
Power dissipation
150
W
Derate above 25
1.0
W/°C
TJ, Tstg
Operating and Storage Temperature
-55 to 175
°C



Parameters:

Technical/Catalog InformationFDI3652
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C61A
Rds On (Max) @ Id, Vgs16 mOhm @ 61A, 10V
Input Capacitance (Ciss) @ Vds 2880pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs53nC @ 10V
Package / CaseTO-262AA
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDI3652
FDI3652



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