FDM3300NZ

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 10 A
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : MicroFET
Resistance Drain-Source RDS (on) : 0.016 Ohms
Configuration : Dual Common Quad Drain


Features:

•  10 A, 20 V     R_DS(ON) =  23 mΩ @ V_GS = 4.5 V
                         R_DS(ON) =  28 mΩ @ V_GS = 2.5 V
•  > 2000v ESD Protection
•  Low Profile 1mm maximum in the new package
    MicroFET 3.3x3.3 mm


Application

•  Li-Ion Battery Pack


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current  Continuous              (Note 1a)                        Pulsed	10	A
		40
PD	Power Dissipation (Steady State)       (Note 1a)                                                            (Note 1b)	2.5	W
		1.2
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDM3300NZ  dual  N-Channel  MOSFET  has  been  designed using  Fairchild  Semiconductors  advanced  Power Trench process to optimize the R_DS(ON) @ V_GS = 2.5v on special MicroFET lead  frame with all the drains on one side of the package.

Parameters:

Technical/Catalog Information	FDM3300NZ
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	23 mOhm @ 10A, 4.5V
Input Capacitance (Ciss) @ Vds	1610pF @ 10V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 4.5V
Package / Case	Power33
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDM3300NZ FDM3300NZ