MOSFET 100V N-Ch PowerTrench MOSFET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 4.4 A | ||
| Resistance Drain-Source RDS (on) : | 0.044 Ohms | Configuration : | Single Quad Drain Triple Source | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | MicroFET | Packaging : | Reel |
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain to Source Voltage |
100 |
V |
|
VGS |
Gate to Source Voltage |
± 20 |
V |
|
ID |
Drain Current Continuous (TC = 25 oC, VGS = 10V, RJA = 52/W) |
4.4 |
A |
| Continuous (TC = 25 oC, VGS = 6V, RJA = 52/W) |
3.8 |
||
| Continuous (TC = 100oC, VGS = 10V, RJA = 52/W) |
2.8 |
A | |
| Pulsed Figure |
4 |
A | |
|
EAS |
Single Pulse Avalanche Energy (Note 2) |
190 |
mJ |
|
PD |
Power dissipation |
2.4 |
W |
| Derate above 25 |
19 |
mW/ | |
|
TJ, TSTG |
Operating and Storage Temperature |
-55 to 150 |
This FDM3622 N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
| Technical/Catalog Information | FDM3622 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 4.4A |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 4.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 1090pF @ 25V |
| Power - Max | 900mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 17nC @ 10V |
| Package / Case | Power33 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDM3622 FDM3622 FDM3622DKR ND FDM3622DKRND FDM3622DKR |