FDM3622

MOSFET 100V N-Ch PowerTrench MOSFET

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FDM3622 Picture
SeekIC No. : 00147023 Detail

FDM3622: MOSFET 100V N-Ch PowerTrench MOSFET

floor Price/Ceiling Price

US $ .57~.85 / Piece | Get Latest Price
Part Number:
FDM3622
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.85
  • $.76
  • $.65
  • $.57
  • Processing time
  • 15 Days
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  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.4 A
Resistance Drain-Source RDS (on) : 0.044 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : MicroFET Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 4.4 A
Resistance Drain-Source RDS (on) : 0.044 Ohms
Package / Case : MicroFET


Features:

 rDS(ON)= 44mΩ (Typ.), VGS = 10V, ID = 4.4A
 Qg(tot) = 13nC (Typ.), VGS = 10V
 Low Miller Charge
 Low QRR
    Body Diode
 Optimized efficiency at high frequencies
 UIS Capability (Single Pulse and Repetitive Pulse)



Application

 Distributed Power Architectures and VRMs
 Primary Switch for 24V and 48V Systems
 High Voltage Synchronous Rectifier
    Formerly developmental type 82744



Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
100
V
VGS
Gate to Source Voltage
± 20
V
ID
Drain Current

Continuous (TC = 25 oC, VGS = 10V, RJA = 52/W)
4.4
A
Continuous (TC = 25 oC, VGS = 6V, RJA = 52/W)
3.8
Continuous (TC = 100oC, VGS = 10V, RJA = 52/W)
2.8
A
Pulsed Figure
4
A
EAS
Single Pulse Avalanche Energy (Note 2)
190
mJ
PD
Power dissipation
2.4
W
Derate above 25
19
mW/
TJ, TSTG
Operating and Storage Temperature
-55 to 150



Description

This FDM3622 N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.




Parameters:

Technical/Catalog InformationFDM3622
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C4.4A
Rds On (Max) @ Id, Vgs60 mOhm @ 4.4A, 10V
Input Capacitance (Ciss) @ Vds 1090pF @ 25V
Power - Max900mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs17nC @ 10V
Package / CasePower33
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDM3622
FDM3622
FDM3622DKR ND
FDM3622DKRND
FDM3622DKR



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