FDM606P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : MLP-8
Configuration : Single Hex Drain
Continuous Drain Current : - 6.8 A
Resistance Drain-Source RDS (on) : 0.026 Ohms


Features:

* Fast switching
*r _DS(ON) =0.026(Typ), V_GS = -4.5V
*r _DS(ON) =0.033(Typ), V_GS = -2.5V
*r _DS(ON)  =0.052(Typ), V_GS = -1.8V



Application

* Loadswitch
* Battery charge
* Battery disconnect circuits


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	-20	V
VGS	Gate to Source Voltage	8	V
ID	Drain Current Continuous (TC =25, VGS = - 4.5V) Continuous (TC =100, VGS = - 2.5V) Continuous (TC =100, VGS = - 1.8V) Pulsed	-6.8	A
		-3.8	A
		-3.0	A
		Figure 4
PD	Power dissipation Derate above 25	1.92 15.4	W mW/
TJ ,TSTG	Operating and Storage Temperature	-55 to 150

Description

This FDM606P P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailoredto minimizetheon-stateresistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable
electronics applications.


Parameters:

Technical/Catalog Information	FDM606P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	6.8A
Rds On (Max) @ Id, Vgs	30 mOhm @ 6.8A, 4.5V
Input Capacitance (Ciss) @ Vds	2200pF @ 10V
Power - Max	1.92W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	30nC @ 4.5V
Package / Case	MLP 2 x 5 -6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDM606P FDM606P