FDMB506P

MOSFET LOW_VOLTAGE

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FDMB506P Picture
SeekIC No. : 00163404 Detail

FDMB506P: MOSFET LOW_VOLTAGE

floor Price/Ceiling Price

Part Number:
FDMB506P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 6.8 V Continuous Drain Current : 6.8 A
Resistance Drain-Source RDS (on) : 30 mOhms at 4.5 V Configuration : Single Hex Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : MicroFET Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 30 mOhms at 4.5 V
Configuration : Single Hex Drain
Package / Case : MicroFET
Continuous Drain Current : 6.8 A
Gate-Source Breakdown Voltage : +/- 6.8 V


Parameters:

Technical/Catalog InformationFDMB506P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C6.8A
Rds On (Max) @ Id, Vgs30 mOhm @ 6.8A, 4.5V
Input Capacitance (Ciss) @ Vds 2960pF @ 10V
Power - Max1.9W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs30nC @ 4.5V
Package / CaseMicroFET-6
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDMB506P
FDMB506P



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