FDMC8884

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : Power 33
Resistance Drain-Source RDS (on) : 19 mOhms
Continuous Drain Current : 9 A


Specifications

      

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FDMC8884	Full Production	Green	$0.234	Power 33	8	TAPE REEL	MLP08O	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &2 (2-Digit Date Code) &K Line 2: FDMC Line 3: 8884

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDMC8884 is available. Click here for more information .

Description

This FDMC8884 N-Channel MOSFET is produced using FairchildSemiconductor?s advanced Power Trench® process that hasbeen especially tailored to minimize the on-state resistance. Thisdevice is well suited for Power Management and load switchingapplications common in Notebook Computers and PortableBattery Packs.

Parameters:

Technical/Catalog Information	FDMC8884
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	19 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds	685pF @ 15V
Power - Max	2.3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	14nC @ 10V
Package / Case	Power33
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDMC8884 FDMC8884 FDMC8884TR ND FDMC8884TRND FDMC8884TR